InxGa1-xAs-epitaxy with metalorganic adducts

Two metalorganic adducts (trimethylindium-trimethylarsine (CH3)3In-As(CH3)3 and trimethylgallium-trimethylarsine (CH3)3Ga-As(CH3)3) have been used for the epitaxial growth of InxGa1-xAs on InP, and GaAs, substrates at normal pressure. Epitaxial layers with net carrier concentrations of n = 2 × 10 16 cm -3 , μ300K = 6600 cm/ 2 /Vs (In 0.53 Ga 0.47 As/InP) and n = 1 × 10 16 cm -3 , μ = 3200 cm 2/Vs (In0.2Ga0.8As/GaAs) have been grown.