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High Performance CMOSFET Technology for 45nm Generation and Scalability of Stress-Induced Mobility Enhancement Technique
High Performance CMOSFET Technology for 45nm Generation and Scalability of Stress-Induced Mobility Enhancement Technique
2006
Amane Oishi
O. Fujii
T. Yokoyama
K. Ota
T. Sanuki
H. Inokuma
K Eda
T. Idaka
Hideshi Miyajima
S. Iwasa
H. Yamasaki
K. Oouchi
K. Matsuo
Hajime Nagano
T. Komoda
Y. Okayama
T. Matsumoto
K. Fukasaku
T. Shimizu
Kiyotaka Miyano
Tetsuhiro Suzuki
K. Yahashi
A. Horiuchi
Y. Takegawa
K Saki
S. Mori
K. Ohno
Ichiro Mizushima
M. Saito
Makoto Iwai
Seiji Yamada
N. Nagashima
F. Matsuoka
Keywords:
Parallel computing
Scalability
Materials science
Optoelectronics
stress induced
Correction
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