Old Web
English
Sign In
Acemap
>
Paper
>
Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method
Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method
2020
Takeshi Okamoto
Takahiro Kanda
Yuichiro Tokuda
Nobuyuki Ohya
Kiyoshi Betsuyaku
Norihiro Hoshino
Isaho Kamata
Hidekazu Tsuchida
Keywords:
Metallurgy
Chemical vapor deposition
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
6
References
0
Citations
NaN
KQI
[]