Variability analysis — Prediction method for nanoscale triple gate FinFETs

We expanded our analytical compact model for the drain current of undoped or lightly doped nanoscale FinFETs, in order to predict and decompose variability in the electrical characteristics of FinFETs. The model has been evaluated by comparison to TCAD simulated devices with predefined variability. Successful application to experimental data of FinFETs with fin width W fin = 15 nm, gate length L G =30 nm, equivalent gate oxide thickness t ox = 1.7 nm and fin height H fin = 65 nm, has attributed their behavior to geometrical variations (of L G , W fin ) and variability in the metal gate work function (Φ m ). Furthermore, variability of FinFETs having different number of fins (2-50) and fin's pitch (200-1000 nm) has been investigated.