Transient behavior and low VDS hysteresis in PD SOI MOSFETs

Abstract The floating-body configuration of PD SOI MOSFETs gives rise to both static and dynamic effects, that can strongly affect the performance of PD SOI circuits. In this work we present an experimental characterization of the transient behavior of these devices and of its dependence on the impact ionization regime at the drain end. The same transients also affect the static parameter extraction giving rise to a transient hysteresis in the low V DS region of the DC characteristics.