Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1−xInxAs/GaAs on GaAs quantum wells

We have studied Ga0.47In0.53Al/Al0.48In0.52As quantum wells grown by molecular beam epitaxy (MBE). The smoothing effect of a Ga0.47In0.53As buffer layer results in narrow linewidth. Strained layer superlattices of Ga0.85In0.15As/GaAs exhibit excitonic transition at 77 and 300 K as seen by absorption measurement. A model is proposed to explain the different energy transitions.