Based biosensor and method for manufacturing a silicon nanowire TFET of

The present invention provides a silicon-based biosensor nanowire tunnel field effect transistor and manufacturing method, comprising the step of fabricating a silicon-silicon nanowires triangular section channel nanowire tunnel field-effect transistor, in the silicon nanowires channel surface modifying reagent and the active film is formed on the active surface of the film forming step of capture probes. Process of this invention is simple and strong controllability, is fully compatible with existing semiconductor processes; lower cost, suitable for mass production; device having a bipolar characteristic, the detection results of the two-way control, to ensure the accuracy of detection, particularly for biological application of molecular detection. Further, silicon nanowire sensor of the present invention, nanowires triangular cross section, the structure other nanowire structure (e.g., cylindrical, trapezoidal cross-section) compared to the larger specific surface area, higher modulation efficiency, and the exposed silicon nanowire two (111) plane orientation is easier to form a monomolecular film biosensitive dense advantageous for biochemical sensing.