Preparation and characterization of MOCVD thin films of indium tin oxide

Abstract Indium Tin Oxide (ITO) was deposited by pyrolysis of mixed metal acetylacetonate (a single solid-source precursor). This study demonstrates that the properties of the as-deposited film depend on the deposition temperature. Films with a resistivity of 7.2×10 −4 Ω cm , a visible transmission of over 80%, and a direct optical energy gap of 3.76 eV were deposited.