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Aluminum gate metallization for high-performance a-Si: H TFTs fabricated from high-deposition rate PECVD materials
Aluminum gate metallization for high-performance a-Si: H TFTs fabricated from high-deposition rate PECVD materials
1997
Joo Han Kim
Chun Ying Chen
Byung Hyuk Min
Jerzy Kanicki
Keywords:
Plasma-enhanced chemical vapor deposition
Composite material
Aluminium
Materials science
deposition rate
Optoelectronics
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