전하보유모델에 기초한 SONOS 플래시 메모리의 전하 저장층 두께에 따른 트랩 분석

In this paper, the data retention characteristics were analyzed to find out the thickness effect on the trap energy distribution of silicon nitride in the silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. The nitride films were prepared by low pressure chemical vapor deposition (LPCVD). The flat band voltage shift in the programmed device was measured at the elevated temperatures to observe the thermal excitation of electrons from the nitride traps in the retention mode. The trap energy distribution was extracted using the charge decay rates and the experimental results show that the portion of the shallow interface trap in the total nitride trap amount including interface and bulk trap increases as the nitride thickness decreases.