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3300V Scaled IGBT Switched by 5V Gate Drive
3300V Scaled IGBT Switched by 5V Gate Drive
2019
Hiramoto Toshiro
Saraya Takuya
Itou Kazuo
Takakura Toshihiko
Fukui Munetoshi
Suzuki Shinichi
Takeuchi Kiyoshi
Tsukuda Masanori
Numasawa Yohichiroh
Satoh Katsumi
Matsudai Tomoko
Saito Wataru
Kakushima Kuniyuki
Hoshii Takuya
Furukawa Kazuyoshi
Watanabe Masahiro
Shigyo Naoyuki
Wakabayashi Hitoshi
Tsutsui Kazuo
Iwai Hiroshi
Ogura Atsushi
Nishizawa Shin-ichi
Omura Ichiro
Ohashi Hiromichi
Keywords:
Electrical engineering
Insulated-gate bipolar transistor
Correction
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