Effect of annealing treatment on thermoelectric properties of Ti-doped ZnO thin film

Ti-doped ZnO thin film on the glass substrate was synthesized by a dc magnetron sputtering system. A target in diameter of 60.0 mm and thickness of 3.0 mm was prepared by solid-state reaction (SSR) method from TiO2 and ZnO powders, then the Ti-containing confirmed by X-ray diffraction (XRD) technique. The deposition condition was under base pressure at 4.67 × 10−3Pa, operated at the pressure of 2.13 Pa, electrical current and voltage sputtering approximate of 120 mA and 500±5 V, respectively. The deposition time of 5 min was controlled the film thickness fixed around 100 nm. After deposition, the thin film samples were annealed at 373, 473 and 573 K for 60 min under a vacuum state. Phase identification, film thickness, Seebeck coefficient and electrical resistivity of as-deposited and annealed thin films were carried by the XRD technique, Tolansky method, steady-state method and Van der Pauw four-point probe method, respectively. It was found that the XRD results showed the thin film was crystal structure...