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Acemap > Paper > Fabrication and Characterization of 100-nm $hbox In_0.53hbox Ga_0.47hbox Ashbox-hbox In_0.52hbox Al_0.48hbox As$ Double-Gate HEMTs With Two Separate Gate Controls

Fabrication and Characterization of 100-nm $hbox In_0.53hbox Ga_0.47hbox Ashbox-hbox In_0.52hbox Al_0.48hbox As$ Double-Gate HEMTs With Two Separate Gate Controls

2005 
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