Semiconductor light-emitting element and light-emitting device

Disclosed is a semiconductor light-emitting element with which a decline in light emission efficiency due to oxidation of quantum dot phosphors can be suppressed. A semiconductor light-emitting element (1) according to the present invention comprises: a semiconductor layer containing an active layer (13); a first metal layer (16) formed on the semiconductor layer; a first insulating film (18) formed on the first metal layer (16) so as to cover the upper face and side face of the semiconductor layer; a second insulating film (20) containing fine semiconductor particles formed on the first insulating film (18); and a third insulating film (21) formed on the second insulating film (20). The second insulating film (20) is covered by the first insulating film (18) and the third insulating film (21).