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Effects of Base Oxide and Silicon Composition on Charge Trapping in HfSiO/SiO2 High-k Gate Stacks
Effects of Base Oxide and Silicon Composition on Charge Trapping in HfSiO/SiO2 High-k Gate Stacks
2004
Wei-Hao Wu
Mao-Chieh Chen
M.F. Wang
Tuo-Hung Hou
Liang-Gi Yao
Yin Jin
Shih-Chang Chen
Mong-Song Liang
Keywords:
Oxide
High-κ dielectric
Nanotechnology
Silicon
Materials science
Inorganic chemistry
Optoelectronics
gate stack
Trapping
Correction
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