PbS/PbSSe/PbSnSe heterostructure lasers with a quantum-well active region

Semiconductor single-quantum-well double-heterostructure lasers with a Pb0.95Sn0.05Se active region from Lz=400 to 2000 AA were fabricated by hot wall molecular epitaxy. For Lz 1000 AA the laser emission corresponds to the energy gap of the material in the active region. The lowest threshold current (230 A cm-3 at 77 K) and the highest operating temperature (218 K) were obtained for the laser with Lz=2000 AA.