0.5-/spl mu/m bipolar technology using a new base formation method: SST1C

New super self-aligned process technology has been developed using a new method of shallow base formation and a 0.5-/spl mu/m self-aligned double polysilicon bipolar process. The method of base formation, which uses a diffusion source of this oxide implanted with BF/sub 2/ ions, can be easily used in combination with SST technology. Furthermore, the collector electrode is formed by trench-filled phosphorous-doped polysilicon, which reduces transistor area and collector resistance. Using this technology, a high cut-off frequency of 40.75 GHz at V/sub CE/ = 1 V, ECL gate delay time of 22.6 ps/G at 2.4 mA and 22.4-GHz static 8:1 diver have been obtained.