Tin-doped Indium Oxide wettability improvement in nitrogen radio frequency discharge

In this work, Indium Tin Oxide (ITO) thin films used to optoelectronic devices were treated by cold plasma of nitrogen. The latter was produced by radio frequency (RF) low-pressure electrical discharge. The transmission function of the plasma assembly was found and thus the discharge impedance and the actual power delivered between the electrode plates were calculated. The films were studied by contact angle (CA) measurements, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM).