Effect of gamma irradiation on room-temperature SWIR HgCdTe photodiodes

Planar n + -on-p SWIR Hg 1-x Cd x Te(x equals 0.577 approximately 0.669) photodiodes passivated with ZnS were irradiated by Co 60 gamma source. The room temperature current-voltage characteristics of the photodiodes were carried out following the irradiation. And response spectrum, capacitance-voltage and noise spectrum of the devices were measured respectively before and after 1.0Mrads gamma irradiation. The results are found that the RT SWIR HgCdTe photodiodes are extremely hard to gamma irradiation with no perceivable deterioration in the device performance even upon irradiation of up to 1.0Mrads.