SnS2 and SnSe2 photoemission studies

Angle-integrated photoemission measurements have been made on the tin dichalcogenides SnS2 and SnSe2. A great number of energy distribution curves (EDC) for energies of incident photons varying between 7 and 27.4 eV have been obtained using a retarding potential method. Structures on EDC are identified as high density-of-states peaks in valence or conduction bands. A useful comparison is made between experimental results and band structures recently calculated for the two materials.