Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

Double-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.