High-power, high-speed, low-noise operation of uniformly p-doped 1550-nm InGaAlAs compressively strained MQW ridge-waveguide lasers

High-performance 1550-nm lasers are of great interest for optical-fiber-communication applications. The InGaAlAs material system using undoped ternary multiple quantum wells (MQW) has demonstrated excellent high-temperature and high-speed performance at 1550 nm in a simple ridge-waveguide (RWG) structure.1 Uniformly p-doped InGaAsP MQW material has shown a world-record high-speed performance in a more complex CMBH laser structure.2 Here we report a simple InGaAlAs RWG structure with uniformly p-doped InGaAlAs compressively strained quantum wells with superior high-temperature, high-power, frequency-response, and low-noise performance. Similar RWG structures in InGaAlAs material at 1300 nm have shown high-temperature and high-power performance, as well as excellent reliability.3,4 High-speed and low-noise performance of 1300-nm lasers has been reported.5