High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers

GaAs-AlGaAs quantum-well (850 nn) vertical-cavity surface-emitting lasers, with lateral current injection and shallow implanted apertures, show small signal modulation bandwidths of at least 11 GHz and large signal data rates of at least 10 Gb/s. The devices achieved a maximum output power of 2.1 mW, with a threshold current and voltage of 1 mA and 1.71 V, respectively. The shallow implantation step provides photolithographically precise aperture formation (using O/sup +/ ions), for efficient lateral current injection into the quantum-well active region of the laser, from intracavity contacts. The device aperture was 7 /spl mu/m in diameter, and the opening in the annular top contact was 13 /spl mu/m in diameter. The optical spectrum showed several transverse modes.