Characterization of high mobility inverted coplanar Zinc Nitride Thin-film Transistors

In this work, high mobility TFTs based on zinc nitride (Zn 3 N 2 ) sputtered at room temperature using spin-on glass (SOG) as gate dielectric are presented. The inverted coplanar structure is used for the Zn 3 N 2 TFTs . The devices exhibit an on/off-current ratio of 10 6 and a subthreshold slope of 0.88 V/decade. The extracted field-effect mobility was 15.8 cm 2 /Vs which is among the highest reported for Zn 3 N 2 TFTs. In addition, n-type MOS capacitors were fabricated and characterized by capacitance – voltage and capacitance – frequency measurements to evaluate the dielectric characteristics of the SOG film.