Monolithic 3D Integration of 2D Electronics based on Two-Dimensional Solid-Phase Crystallization

Monolithic 3D integration (M3D) of two-dimensional materials (2DMs) based on a device structure similar to the vertically stacked nanosheet (NS) gate-all-around (GAA) field-effect transistor (NS-GAAFET) is one of the most feasible paths for end-of-roadmap logic device scaling. A novel synthesis route, 2D solid-phase crystallization (2DSPC), is presented in this paper for M3D of 2DMs. 2DSPC presents a unique opportunity for achieving wafer-level uniformity, centimeter-scale mono-crystalline grain, and scalable synthesis for multiple vertical layers. We believe 2DSPC offers a promising pathway toward future cost-effective M3D-2D electronics.