Analysis of quantization effects in silicon (100) inversion layers using a Monte Carlo tool

The continued reduction of gate oxide thicknesses and increase of channel doping has created an important need for careful treatment of inversion layer quantization in device models. In this work, the electron transport in a uniform silicon (100) inversion layer has been studied with single-particle Monte Carlo (MC) simulation. With channel quantization effects included, the universal mobility curve in the ohmic region, good agreement with the velocity-field characteristics produced by the UT-mobility model has also been obtained.