Characteristics of a‐Si solar cells prepared by the super chamber at a high substrate temperature

A new approach to high-performance a-Si solar cells was studied. a-Si films prepared at a high substrate temperature (> 250°C) have a higher absorption coefficient and a low SiH2 bond density. the effect of deposition temperature on the open-circuit voltage (Voc) has been investigated systematically for glass/SnO2 Ipin/metal and glass/metal/nip/indium tin oxide (ITO) structure a-Si solar cells. The Voc is found to depend strongly on the thermal history of the p/i interface. A short-circuit current of 19.5 mA/cm−−2 was achieved for an a-Si solar cell using an a-Si i-layer with a thickness of 4000 A, which was prepared at a substrate temperature of 270°C.