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Gate stack and source/drain junction formations for high-mobility Ge MOSFETs
Gate stack and source/drain junction formations for high-mobility Ge MOSFETs
2013
Hiroshi Nakashima
Keisuke Yamamoto
Haigui Yang
Dong Wang
Keywords:
Drain-induced barrier lowering
Time-dependent gate oxide breakdown
Electronic engineering
Materials science
Optoelectronics
gate stack
Correction
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