A process oxidized regions on an interface of a metal surface and an overcoat layer in a Halbleitermetallisierungsschicht removing

In one method oxidized and discolored areas of a copper surface to remove a mixture of a reactive gas, such as from NH¶3¶, and a purge gas, such N¶2¶ used with a relatively low high-frequency power to substantially all copper oxide remove from the surface. Preferably, a silicon cap layer containing on the copper surface is subsequently formed, whereby the deposition can be performed immediately after the surface treatment without an additional transfer step, as the process conditions in the reaction chamber, which are necessary for the deposition, are already present.