Switching Optimization of WBG Power Devices on Inverter Leg

In this paper the authors are interested by the switching optimisation of a SiC Power MOSFET in an inverter leg. The authors explain their efforts to build a test-bench that allows the extremely fast switching measurement of this WBG (Wide Band-Gap) component. Then trade-off curves between the dv/dt versus the switching energy are presented. The parameters are the external gate resistor and an additional gate-drain capacitor. Finally, basic dv/dt models are proposed and compared with the experimental results.