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Physical-mathematical model of damage regions in irradiated heavily doped silicon
Physical-mathematical model of damage regions in irradiated heavily doped silicon
1989
V. L. Litvinov
N.A. Ukhin
Yu. I. Churakov
Keywords:
Condensed matter physics
Hall effect
Doping
Crystal structure
Silicon
Fermi level
Neutron flux
Crystallographic defect
Materials science
Semimetal
Correction
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