Production method for an epitaxial wafer and the holding device used in this case to hold the wafer

Method for manufacturing an epitaxial wafer, comprising Direction susceptor in a reaction chamber a recess and a said recess surrounding annular stepped portion, wherein a number of through holes are provided in the bottom wall of the aforementioned recess, except for the aforementioned stepped portion and passing through the above-mentioned holes plugged lift pins, the wafer is held temporarily, and then the above-mentioned wafer is placed with the underside of its outer edge to the aforementioned stepped portion, so that the aforesaid wafer is received in the aforementioned recess, and by introducing the starting gas into the reaction chamber on the surface the captured in the recess above the wafer, an epitaxial layer is formed, and epitaxially in this manufacturing method for the above-mentioned wafer in the formation of the aforementioned s layer on the surface of the wafer protruding the aforementioned lift pins on the aforesaid bottom wall towards the top, wherein the height h of the crest portion of the aforementioned lift pins to the top side of the bottom wall as a reference point from a 0 mm border position starting until immediately before contact of the lift pins to the relative is adjusted wafer, and in a state in which the lifting pin contacts the tapered portion of the through hole, the height of the center of the elevating pin is above the level of the bottom wall of the susceptor; characterized in that the bottom surface of the susceptor is flat, and the lift pins have a convex toward the wafer, spherical surface.