Aluminium free GaInAsP/GaAs lasers of 808 nm wavelength range by gas source MBE

We report on the manufacturing and performance of Al-free GaInAsP/GaAs laser diodes and laser bars operating in the 808 nm range commonly used for the Nd-YAG laser pumping. These lasers were for the first time grown by the gas source molecular beam epitaxy and demonstrated to perform favorably with the commonly used AlGaAs based material.