Ion-implanted double-drift K a -band diodes

The application of a doubly charged boron ( 11 B +2 ) beam to the formation of p-type drift regions in symmetrical K a -band double-drift silicon IMPATT diodes is discussed. Devices fabricated with these implanted impurity distributions exhibited output powers ∼1.2 W with 10-percent conversion efficiencies over the frequency range of 29 to 39 GHz.