Influence of Annealing Temperature on Microstructures and Resistivity of FexAl1-x Films

In this paper, FexAl 1-x films have been deposited on silicon substrates using electron beam evaporation, which have been not reported to prepare Fe x Al 1-x films before. Subsequently, the films were annealed in vacuum better than 3 x10 -4 Pa for 1 hour at 100°C, 280°C, 330°C, 450°C and 500°C, respectively. Electrical resistivities of the samples were been measured by four point probe, and microstructures of the samples were characterized by X-ray diffraction(XRD). The results show that, the resistivity of films reduces gradually with increasing of the annealing temperature, and the structure of films can be improved after annealing. In addition, the resistivity of film reduces gradually with increasing thickness and comes closed to the that of bulk when the film thickness becomes thicker than 100nm.