Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers

A quantitative RE-O interface dipole model was presented to explain Ni-FUSI Phi m using RE-based interlayers (RE IL ). The expected strengths of interface RE-O dipole and extracted Phi m values show excellent correlation. It further demonstrates that the NiSi Phi m on high- k dielectrics can be engineered by the insertion of thin RE IL at the high-k/SiO 2 interface.