Bias circuit effects on the current‐voltage characteristic of double‐barrier tunneling structures: Experimental and theoretical results
1990
Using the stable, dc current‐voltage (I‐V) curve measured from a double‐barrier resonant tunneling structure, we have studied the effects of external circuit elements on device oscillations. A simulation, using the experimental I‐V and a simple circuit model for the biasing arrangement, showed that hysteresis and vertical jumps appear in the current‐voltage curve when the circuit oscillates. This observation is supported by experimental results obtained on the same device with external circuit elements intentionally added to the biasing configuration.
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