A study on channel potential for lightly-doped gate-all-around 6H-SiC nanowire FETs

A continuous and analytic channel potential model for lightly doped gate-all-around (GAA) 6H-SiC nanowire (NW) FETs is developed incorporating the influence of incomplete dopant ionization. By solving the 1D Possion's equation, and using Lambert-W function, the channel potential and the inversion charge are adequately described from the sub-treshold to the strong inversion.