Si and Mg Ion Implantation for Doping of GaN Grown on Silicon

N- and p-type doping of GaN grown on silicon using ion implantation of silicon and magnesium respectively, were investigated. For n-type doping, we studied the effects of high temperature annealing and implanted dose on Si activation. We obtained low sheet resistance of implanted layer, compatible with power device and Radio Frequency applications. P-type doping is more challenging. However, by using the combination of soak annealing with RTA at very high temperature and the N co-implantation, we evidenced two promising ways of optimizing p-doping that could lead to the electrical activation of Mg implanted GaN on Si layers.