Old Web
English
Sign In
Acemap
>
Paper
>
Fabrication process of pentacene-based vertical OFETs with HfO₂ gate insulator (シリコン材料・デバイス)
Fabrication process of pentacene-based vertical OFETs with HfO₂ gate insulator (シリコン材料・デバイス)
2012
Min Liao
Hiroshi Ishiwara
Shun-ichiro Ohmi
Keywords:
Computer science
Optoelectronics
Insulator (electricity)
Pentacene
Fabrication
polystyrene spheres
gate insulator
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]