THE EFFECT OF NANO AND MICRO POROSITY ON THE SCHOTTKY BARRIER HEIGHT AND IDEALITY FACTOR IN THE I–V CHARACTERISTICS OF PtSi/p-Si IR DETECTOR

In this paper, the effect of porosity on reverse bias current–voltage characteristics of PtSi/por-Si (p-type) IR detector as a function of temperature is investigated. Our experimental data for two samples with different porosities (50% and 10%) at 300 K and 77 K are reported by Raissi et al.1 These data indicates a breakdown-like behavior. Our analytical model is based on hole thermionic emission with large ideality factor (n ≈ 200). Our calculations show that at each temperature, the Schottky barrier height, as well as the ideality factor, in sample with 10% porosity is bigger than that of 50%. These variations could be due to band gap variations of Si size effect using quantum dot model, and the presence of the relatively high (~1015 cm-2 eV-1) density of states at the silicide/por-silicon interface, respectively.