220GHz wide-band MEMS switch in standard BiCMOS technology

A wideband MEMS switch with the operating frequency up to 250GHz using standard BiCMOS process in cluding embedded RF-MEMS structure has been presented in this paper. Collaborative design and optimization of mechanical characteristics and RF characteristics are carried out to guarantee the mechanical reliability. By adopting π-type circuits topology with low impedance t-line, the MEMS switch results in a measured return loss of 24 to 12dB, and an isolation of 54 to 30 dB within the frequency range of 180–250GHz, The MEMS switch exhibits an insertion loss of 1.9dB at 220GHz with pull-in voltage of 50V.