DENSITY-FUNCTIONAL CALCULATION OF LANDAU LEVELS FOR QUASI-TWO-DIMENSIONAL HOLE GASES

p-type accumulation and inversion layers at a [110] Si surface in large external magnetic fields are investigated in the Sham-Kohn approximation. We consider the magnetic field dependence of the self-consistent potential for up to two occupied subbands. The transversal resistivity is calculated in SCBA and compared with the density of states in the lowest order cimulant approximation. Some features of the Shubnikov--de Haas effect, i.e., the beating pattern for the case of one occupied subband and the second oscillation, which appears when one further subband is populated, could be reproduced quantitatively. The dependence of the node in the beating pattern on an externally applied uniaxial strain is explained qualitatively.