InvertedSi:PbS Colloidal Quantum Dot Heterojunction-BasedInfrared Photodetector
2020
Silicon
and PbS colloidal quantum dot heterojunction photodetectors
combine the advantages of the Si device and PbS CQDs, presenting a
promising strategy for infrared light detecting. However, the construction
of a high-quality CQDs:Si heterojunction remains a challenge. In this
work, we introduce an inverted structure photodetector based on n-type
Si and p-type PbS CQDs. Compared with the existing normal structure
photodetector with p-type Si and n-type PbS CQDs, it has a lower energy
band offset that provides more efficient charge extraction for the
device. With the help of Si wafer surface passivation and the Si doping
density optimization, the device delivers a high detectivity of 1.47
× 1011 Jones at 1540 nm without working bias, achieving
the best performance in Si/PbS photodetectors in this region now.
This work provides a new strategy to fabricate low-cost high-performance
PbS CQDs photodetectors compatible with silicon arrays.
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