High-rate deposition of a-SiN x :H films for photovoltaic applications

2001 
The feasibility of the new ‘Expanding Thermal Plasma’ technique for the deposition of a-SiN x :H at high deposition rates (typically ∼20A/s) has been investigated. The structural film properties of the a-SiN x :H are reported for various process conditions and the application of the material as antireflection coating on (multi)crystalline silicon solar cells is studied. Furthermore, the performance of the material for surface and bulk passivation is investigated.
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