Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects

Abstract A large number of factors such as the increasingly stringent pollutant emission policies, fossil fuel scarcity and their price volatility have increased the interest towards the partial or total electrification of current vehicular technologies. These transition of the vehicle fleet into electric is being carried out progressively. In the last decades, several technological milestones have been achieved, which range from the development of basic components to the current integrated electric drives made of silicon (Si) based power modules. In this context, the automotive industry and political and social agents are forcing the current technology of electric drives to its limits. For example, the U.S Department of Energy’s goals for 2020 include the development of power converter technologies with power densities higher than 14.1 kW/kg and efficiencies greater than 98%. Additionally, target price of power converters has been set below $3.3/kW. Thus, these goals could be only achieved by using advanced semiconductor technologies. Wide-bandgap (WBG) semiconductors, and, most notably, silicon carbide (SiC) based power electronic devices, have been proposed as the most promising alternative to Si devices due to their superior material properties. As the power module is one of the most significant component of the traction power converter, this work focuses on an in-deep review of the state of the art concerning such element, identifying the electrical requirements for the modules and the power conversion topologies that will best suit future drives. Additionally, current WBG technology is reviewed and, after a market analysis, the most suitable power semiconductor devices are highlighted. Finally, this work focuses on practical design aspects of the module, such as the layout of the module and optimum WBG based die parallelization, placement and Direct Bonded Copper (DBC) routing.