The dielectric properties of LB film fabricated on the silicon wafer for DRAM application

Metal-insulator-semiconductor structures have been fabricated by sandwiching L-α-DLPC Langmuir-Blodgett(LB) films between metals like a silver, aluminium and n-type silicon wafer. The structure, electrode, electrode area, bias current, and dielectric properties of this MIS capacitor were investigated and the real part of the relative permittivity of LB layers is found by measuring the capacitance of a metal/LB film/semiconductor sandwitch structure. The dielectric constant either be calculated parallel to the substrate surface(in the film plane) or perpendicular to it(through-plan) and dielectric constant of the MIS capacitor(perpendicular structure) shows very high value with Ag electrode and small electrode area.