A new dynamic model for the kink effect in InAlAs/InGaAs HEMTs

We present a new model for the dynamic behavior of the kink effect in InAlAs/InGaAs HEMTs. The model suggests that the kink is due to a threshold voltage shift which arises due to hole pileup in the extrinsic source and an ensuing charging of the surface. The model is incorporated in a simple equivalent circuit, which explains well DC characteristics of the kink, its time evolution in the nanosecond range, as well as its dependence on illumination.