Method of spin markers in silicon: pair defects and interstitial centers with a partly filled core

A method is proposed for determination of the charge state of nonparamagnetic defects in silicon occupying interstitial sites in the crystal lattice and characterized by a partly filled core, and the charge state of pair defects but with completely filled core orbitals. An analysis is made of the role of the local effects in changes of the position of a marker level in the band gap in the case of defects with different occupancies of the core orbitals