ADVANCED SOLUTIONS FOR MOBILITY ENHANCEMENT IN SOI MOSFETS

SOI technology offers ample room for scaling, performance improvement, and innovations. The current status is reviewed by focusing on several technological options for boosting the transport properties in SOI MOSFETs. The impact of series resistance, high-K dielectrics, and metal gate in advanced transistors is discussed. Carrier mobility measurements as a function of channel length and temperature reveal the beneficial effect of strain, mitigated however by various types of defects. The experimental data is exclusively collected from state-of-the-art, ultrathin body, fully depleted MOSFETs. Simple models are presented to clarify the mobility behavior.